Alliance Memory at electronica 2016

At electronica 2016, Alliance Memory will be highlighting its latest high-speed CMOS synchronous DRAMs (SDRAM), including newly released low-power mobile (MSDR), double data rate (DDR), DDR2, mobile low-power DDR2 (LPDDR2), and DDR3 SDRAMs in a variety of densities. The company will also highlight its collaboration with Micron Semiconductor to offer discontinued 512-Mb SDRAMs. In addition, Alliance Memory will be showcasing 16-Mb fast CMOS SRAMs in a wide range of package options.

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Alliance Memory’s ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, automotive, medical, communications, telecom, and consumer electronics products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications. The devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components. In addition, the company performs minimal or no die shrinks, which frees up engineering resources.

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Memory Products on Display

Alliance Memory Successfully Collaborates With Micron Semiconductor to Offer Discontinued 512-Mb Synchronous DRAMs (SDRAM) 

Alliance Memory offers Micron Semiconductor 512-Mb SDRAMs in the 54-pin TSOP II package with commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges and operation from a single +3.3-V (±0.3 V) power supply. Lead (Pb)- and halogen-free, the MT48LC32M16A2P-75:C, MT48LC32M16A2P-75 IT:C, MT48LC64M8A2P-75:C, and MT48LC64M8A2P-75 IT:C are PC100- and PC133-compliant.

High-Speed, Low-Power CMOS Mobile Synchronous DRAMs (MSDR)
Alliance Memory will introduce two new high-speed, low-power CMOS mobile synchronous DRAMs (MSDR) designed to extend battery life in mobile devices. The 512-Mb AS4C32M16MS and AS4C16M32MS are internally configured as four banks of 32M word x 16 bits and 16M word x 32 bits and are offered in 8-mm by 9-mm 54-ball and 8-mm by 13-mm 90-ball FPBGA packages, respectively. The devices feature low power consumption of 1.8 V and a number of power-saving features, including auto temperature-compensated self-refresh (ATCSR); partial array self-refresh (PASR); and a deep power down (DPD) mode. The MSDRs offer high-speed operation with clock rates up to 166 MHz and are available in both extended commercial (-25 °C to +85 °C) and industrial (-40 °C to +85 °C) temperature ranges.

High-Speed CMOS Double Data Rate Synchronous DRAMs (DDR SDRAM)
Alliance Memory is introducing a new 1-Gb high-speed CMOS double data rate synchronous DRAM (DDR SDRAM) in the 66-pin TSOP II package. Internally configured as four banks of 64M word x 16 bits, the AS4C64M16D1 features a fast clock rate of 166 MHz and operates from a single +2.5-V (±0.2 V) power supply. The device is available in commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges.

High-Speed CMOS Double Data Rate 2 Synchronous DRAMs (DDR2 SDRAM)
Alliance Memory’s lineup of high-speed CMOS double data rate 2 synchronous DRAMs (DDR2 SDRAM) includes 2-Gb devices with fast clock rates of 400 MHz and data rates of 800 Mbps/pin. Offering high density, the 128M x 16 AS4C128M16D2 is available in the 84-ball, 8-mm by 12.5-mm by 1.2-mm FBGA package, while the 256M x 8 AS4C256M8D2 features the 60-ball, 8-mm by 10-mm by 1.2-mm FBGA package. The devices are available in commercial (0 °C to +85 °C) and industrial (-40 °C to +95 °C) temperature ranges, and they operate from a single +1.8-V (±0.1 V) power supply.

High-Speed CMOS Mobile Low-Power Double Data Rate 2 (LPDDR2) Synchronous DRAMs (SDRAM)
Alliance Memory has expanded its offering of mobile low-power synchronous DRAMs (SDRAM) with new double data rate 2 (LPDDR2) components featuring densities of 1 Gb, 2 Gb, 4 Gb, and 8 Gb in 134-ball FBGA packages. Designed to increase efficiency and extend battery life in compact portable devices, the ICs offer low power consumption of 1.8 V and a number of power-saving features, including auto temperature-compensated self-refresh (ATCSR); partial array self-refresh (PASR); and a deep power down (DPD) mode. The LPDDR2s provide high-speed operation with clock rates of 400 MHz and 533 MHz, and they are available in both extended (-30 °C to +85 °C) and industrial (-40 °C to +85 °C) temperature ranges.

High-Speed CMOS Double Data Rate 3 Synchronous DRAMs (DDR3 SDRAM)
Alliance Memory’s offering of high-speed CMOS double data rate 3 synchronous DRAMs (DDR3 SDRAM) includes new monolithic, low-voltage 8-Gb devices with extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz. The 1G x 8 AS4C1G8MD3L and 512M x 16 AS4C512M16D3L are available in the 78-ball and 96-ball FBGA packages, respectively. The ICs operate from a single +1.35-V power supply and are backwards-compatible with +1.5-V power supplies to enable large memory subsystems. The DDR3 SDRAMs are available with an extended commercial temperature range of 0 °C to +95 °C and an industrial temperature range of -40 °C to +95 °C.

DRAMs for Automotive Applications
Alliance Memory’s DRAM portfolio features a wide variety of components that provide an automotive temperature range of -40 °C to +105 °C. Automotive synchronous DRAMs (SDRAM) include 64-Mb, 128-Mb, and 256-Mb devices with clock rates of 166 MHz in 54-pin TSOP II and 54-ball FBGA packages. Double data rate (DDR) SDRAMs include 64-Mb 4M x 16 devices with data rates of 400 Mbps/pin in the 66-pin TSOP II. Available in densities of 512 Mb and 1 Gb in the 84-ball and 60-ball FBGA packages, automotive double data rate 2 (DDR2) SDRAMs operate from a low 1.8-V power supply and deliver data rates of 800 Mbps/pin. 1-Gb to 4-Gb double data rate 3 (DDR3) SDRAMs feature data rates of 1600 Mbps/pin and operate from 1.35-V power supplies.

Fast CMOS SRAMS
Featuring access times of 10 ns, Alliance Memory’s offering of fast CMOS SRAMs includes 16-Mb devices configured as 2048K x 8 and 1024K x 16 in TSOP I, TSOP II, and TFGBA packages. The components provide low power consumption with operating currents down to 70 mA typical and standby currents of 4 mA typical. The SRAMs operate from a single power supply of 3.3 V and offer a temperature range of -40 °C to +85 °C.

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