Alliance Memory’s ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, automotive, medical, communications, telecom, and consumer electronics products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications. The devices eliminate costly redesigns by providing long-term support for end-of-life (EOL) components. In addition, the company performs minimal or no die shrinks, which frees up engineering resources.
Memory Products on Display
Alliance Memory Successfully Collaborates With Micron Semiconductor to Offer Discontinued 512-Mb Synchronous DRAMs (SDRAM)
Alliance Memory offers Micron Semiconductor 512-Mb SDRAMs in the 54-pin TSOP II package with commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges and operation from a single +3.3-V (±0.3 V) power supply. Lead (Pb)- and halogen-free, the MT48LC32M16A2P-75:C, MT48LC32M16A2P-75 IT:C, MT48LC64M8A2P-75:C, and MT48LC64M8A2P-75 IT:C are PC100- and PC133-compliant.
High-Speed, Low-Power CMOS Mobile Synchronous DRAMs (MSDR)
Alliance Memory will introduce two new high-speed, low-power CMOS mobile synchronous DRAMs (MSDR) designed to extend battery life in mobile devices. The 512-Mb AS4C32M16MS and AS4C16M32MS are internally configured as four banks of 32M word x 16 bits and 16M word x 32 bits and are offered in 8-mm by 9-mm 54-ball and 8-mm by 13-mm 90-ball FPBGA packages, respectively. The devices feature low power consumption of 1.8 V and a number of power-saving features, including auto temperature-compensated self-refresh (ATCSR); partial array self-refresh (PASR); and a deep power down (DPD) mode. The MSDRs offer high-speed operation with clock rates up to 166 MHz and are available in both extended commercial (-25 °C to +85 °C) and industrial (-40 °C to +85 °C) temperature ranges.
High-Speed CMOS Double Data Rate Synchronous DRAMs (DDR SDRAM)
Alliance Memory is introducing a new 1-Gb high-speed CMOS double data rate synchronous DRAM (DDR SDRAM) in the 66-pin TSOP II package. Internally configured as four banks of 64M word x 16 bits, the AS4C64M16D1 features a fast clock rate of 166 MHz and operates from a single +2.5-V (±0.2 V) power supply. The device is available in commercial (0 °C to +70 °C) and industrial (-40 °C to +85 °C) temperature ranges.
High-Speed CMOS Double Data Rate 2 Synchronous DRAMs (DDR2 SDRAM)
Alliance Memory’s lineup of high-speed CMOS double data rate 2 synchronous DRAMs (DDR2 SDRAM) includes 2-Gb devices with fast clock rates of 400 MHz and data rates of 800 Mbps/pin. Offering high density, the 128M x 16 AS4C128M16D2 is available in the 84-ball, 8-mm by 12.5-mm by 1.2-mm FBGA package, while the 256M x 8 AS4C256M8D2 features the 60-ball, 8-mm by 10-mm by 1.2-mm FBGA package. The devices are available in commercial (0 °C to +85 °C) and industrial (-40 °C to +95 °C) temperature ranges, and they operate from a single +1.8-V (±0.1 V) power supply.
High-Speed CMOS Mobile Low-Power Double Data Rate 2 (LPDDR2) Synchronous DRAMs (SDRAM)
Alliance Memory has expanded its offering of mobile low-power synchronous DRAMs (SDRAM) with new double data rate 2 (LPDDR2) components featuring densities of 1 Gb, 2 Gb, 4 Gb, and 8 Gb in 134-ball FBGA packages. Designed to increase efficiency and extend battery life in compact portable devices, the ICs offer low power consumption of 1.8 V and a number of power-saving features, including auto temperature-compensated self-refresh (ATCSR); partial array self-refresh (PASR); and a deep power down (DPD) mode. The LPDDR2s provide high-speed operation with clock rates of 400 MHz and 533 MHz, and they are available in both extended (-30 °C to +85 °C) and industrial (-40 °C to +85 °C) temperature ranges.
High-Speed CMOS Double Data Rate 3 Synchronous DRAMs (DDR3 SDRAM)
Alliance Memory’s offering of high-speed CMOS double data rate 3 synchronous DRAMs (DDR3 SDRAM) includes new monolithic, low-voltage 8-Gb devices with extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz. The 1G x 8 AS4C1G8MD3L and 512M x 16 AS4C512M16D3L are available in the 78-ball and 96-ball FBGA packages, respectively. The ICs operate from a single +1.35-V power supply and are backwards-compatible with +1.5-V power supplies to enable large memory subsystems. The DDR3 SDRAMs are available with an extended commercial temperature range of 0 °C to +95 °C and an industrial temperature range of -40 °C to +95 °C.
DRAMs for Automotive Applications
Alliance Memory’s DRAM portfolio features a wide variety of components that provide an automotive temperature range of -40 °C to +105 °C. Automotive synchronous DRAMs (SDRAM) include 64-Mb, 128-Mb, and 256-Mb devices with clock rates of 166 MHz in 54-pin TSOP II and 54-ball FBGA packages. Double data rate (DDR) SDRAMs include 64-Mb 4M x 16 devices with data rates of 400 Mbps/pin in the 66-pin TSOP II. Available in densities of 512 Mb and 1 Gb in the 84-ball and 60-ball FBGA packages, automotive double data rate 2 (DDR2) SDRAMs operate from a low 1.8-V power supply and deliver data rates of 800 Mbps/pin. 1-Gb to 4-Gb double data rate 3 (DDR3) SDRAMs feature data rates of 1600 Mbps/pin and operate from 1.35-V power supplies.
Fast CMOS SRAMS
Featuring access times of 10 ns, Alliance Memory’s offering of fast CMOS SRAMs includes 16-Mb devices configured as 2048K x 8 and 1024K x 16 in TSOP I, TSOP II, and TFGBA packages. The components provide low power consumption with operating currents down to 70 mA typical and standby currents of 4 mA typical. The SRAMs operate from a single power supply of 3.3 V and offer a temperature range of -40 °C to +85 °C.